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FT IR spectroscopy of nitric acid oxidation of silicon with hafnium oxide very thin layerKOPANI, M; MIKULA, M; PINCIK, E et al.Applied surface science. 2014, Vol 301, pp 24-27, issn 0169-4332, 4 p.Conference Paper

Impacts of Au-doping on the performance of Cu/HfO₂/Pt RRAM devicesTINGTING TAN; TINGTING GUO; XI CHEN et al.Applied surface science. 2014, Vol 317, pp 982-985, issn 0169-4332, 4 p.Article

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Passivation of copper―hafnium thin films using self-forming hafnium oxideFANG, J. S; CHEN, Y. T.Surface & coatings technology. 2013, Vol 231, pp 166-170, issn 0257-8972, 5 p.Conference Paper

Interfacial growth at the HfO_2/Si interface during annealing in oxygen ambientRAN JIANG; ZIFENG LI.Semiconductor science and technology. 2009, Vol 24, Num 6, issn 0268-1242, 065006.1-065006.4Article

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Air-oxidation behavior of a Cu₆₀Hf₂₅Ti₁₅ bulk metallic glass at 375-520 °CKAI, W; HSIEH, H. H; HO, T. H et al.Oxidation of metals. 2007, Vol 68, Num 3-4, pp 177-192, issn 0030-770X, 16 p.Article

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The effect of La₂O₃-incorporation in HfO₂ dielectrics on Ge substrate by atomic layer depositionOH, Il-Kwon; KIM, Min-Kyu; MAENG, W. J et al.Applied surface science. 2013, Vol 287, pp 349-354, issn 0169-4332, 6 p.Article

Evidence of interactions in Co―HfO₂ granular filmsCHADHA, M; NG, V.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 12, issn 0953-8984, 126001.1-126001.8Article

Surfactant-Assisted Hydrothermal Synthesis of Water-Dispersible Hafnium Oxide Nanoparticles in Highly Alkaline MediaSAHRANESHIN, Ameneh; ASAHINA, Shunsuke; TOGASHI, Takanari et al.Crystal growth & design. 2012, Vol 12, Num 11, pp 5219-5226, issn 1528-7483, 8 p.Article

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The K-shell Auger electron spectrum of gadolinium obtained using neutron capture in a solid state deviceSCHULTZ, David; BLASY, Bryan; SCHEMM, N et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 7, issn 0022-3727, 075502.1-075502.7Article

Control of electronic properties of HfO₂ with fluorine doping from first-principlesSCHIMIZU, Tatsuo; KOYAMA, Masato.Applied surface science. 2008, Vol 254, Num 19, pp 6109-6111, issn 0169-4332, 3 p.Conference Paper

EPR study of defects in as-received, γ-irradiated and annealed monoclinic HfO₂ powderWRIGHT, Sandra; FEENEY, S; BARKLIE, R. C et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2378-2381, issn 0167-9317, 4 p.Conference Paper

Hafnia microspheres : Sol-gel-process leads to high density microspheresBRANDAU, E; BRANDAU, T.Advances in science and technology. 1999, pp B97-B99, isbn 88-86538-14-6, 5VolConference Paper

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ARXPS study of the ion mobility through (HfO₂)_x(SiO₂)_1-x formed on air-exposed HfSi_0.5As_1.5GROSVENOR, Andrew P; CAVELL, Ronald G; MAR, Arthur et al.Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 490-494, issn 0142-2421, 5 p.Conference Paper

Interface characterization and current conduction in HfO₂-gated MOS capacitorsCHEN, H. W; CHIU, F. C; LIU, C. H et al.Applied surface science. 2008, Vol 254, Num 19, pp 6112-6115, issn 0169-4332, 4 p.Conference Paper

Batch ALD : Characteristics, comparison with single wafer ALD, and examplesGRANNEMAN, Ernst; FISCHER, Pamela; PIERREUX, Dieter et al.Surface & coatings technology. 2007, Vol 201, Num 22-23, pp 8899-8907, issn 0257-8972, 9 p.Conference Paper